I-National Taiwan Institute of Technology ibhengeze amaphepha ama-6 obuchwephesha kubandakanya imemori ye-Ferroelectric (i-FRAM) kunye nememori yokufikelela ngokungekho mthethweni (MRAM) kwiNkomfa yaMazwe ngaMazwe ye-Intanethi (IEDM) ebibanjelwe e-United States nge-10. Phakathi kwabo, iziphumo zophando zibonisa ukuba ngokuthelekiswa ne-TSMC kunye neTekhnoloji ye-MRAM ye-Samsung, i-ITRI inezibonelelo zokufikelela okuzinzileyo kunye nokukhawuleza.
U-Wu Zhiyi, umlawuli weZiko le-Electro-Optical Systems kwiZiko leTekhnoloji yeTaiwan kaZwelonke, wathi ngokuqala kwexesha le-5G kunye ne-AI, umthetho kaMoore sele uncipha usiya ezantsi, ii-semiconductors ziqhubela phambili ekudityaniseni ngezinto ezinkulu, inkumbulo yesizukulwana esilandelayo enokuqhekeza kuthintelo lweekhomputha olukhoyo luya kudlala indima ebaluleke ngakumbi. I-FRAM evelayo kunye ne-MRAM ifunda kwaye ibhala isantya seZiko ngamakhulu okanye amawaka ngamawaka ngokukhawuleza kunememori yeflashini eyaziwayo. Zonke ziinkumbulo ezingashukumiyo ezineenzuzo zokusebenzisa amandla asezantsi kunye nokusebenza okuphezulu kokusebenza. Ubukho bophuhliso lwesicelo sexesha elizayo kulindeleke.
Uye waveza ukuba ukusebenzisa amandla kwe-FRAM kusezantsi kakhulu, kufanelekile kwi-IoT kunye nokusetyenziswa kwesixhobo. Abathengisi abaphambili beR & D yizixhobo zeTexas kunye neFujitsu; I-MRAM iyakhawuleza kwaye inokuthenjwa, ilungele iindawo ezifuna ukusebenza okuphezulu, njengezimoto zokuqhuba. , Amaziko edatha yefu, njl njl. Abaphuhlisi abaphambili yi-TSMC, Samsung, Intel, GF, njl.
Ngokuphathelele kuphuhliso lwetekhnoloji ye-MRAM, i-ITRI ikhuphe iziphumo zeSpin Orbit Torque (SOT), kwaye yatyhila ukuba le teknoloji ingeniswe ngempumelelo kwimveliso yayo yeefrakh yokuqhuba kwaye iyaqhubeka ukuya kurhwebo.
I-ITRI ichaze ukuba kuthelekiswa ne-TSMC, i-Samsung, kunye nezinye iitekhnoloji ze-MRAM zesizukulwana esimalunga nokwenziwa kobuninzi, I-SOT-MRAM isebenza ngendlela yokuba ubhalo lwangoku lungahambeli ngokwendlela yokumiswa kwesixhobo somatshini , ukuthintela imisebenzi ekhoyo ye-MRAM. Imijikelezo yokufunda nokubhala ibangela ngqo ukonakala kumacandelo, kwaye ikwanenzuzo yokuzinza nokufikelela ngokukhawuleza kwedatha.
Ngokwe-FRAM, i-FRAM ekhoyo isebenzisa i-perovskite crystals njengezixhobo, kwaye izixhobo ze-perovskite zekristale zinezinto eziyinkimbinkimbi zekhemikhali, kunzima ukuvelisa, kwaye izinto ezikhoyo zingaphazamisa i-silicon transistors, oko ke kunyusa ubunzima bokunciphisa ubukhulu bezinto ze-FRAM kunye neendleko zokwenza. . I-ITRI ithathelwe indawo ngempumelelo ye-hafnium-zirconium oxide ferroelectric, engakhange iqinisekise ukuthembeka kwezinto ezisemagqabini, kodwa ikwaphakamise ngakumbi izinto ezisuka kwindiza enamacala amabini ukuya kwisakhiwo esineempawu ezintathu, ebonisa ukubetheka amandla okukhunjulwa okukhunjulwa ngezantsi kwee-nanometers ezingama-28. .
Kwelinye iphepha le-FRAM, i-ITRI isebenzisa isiphumo esincinci sokuhamba kwemilinganiselo ukufezekisa isiphumo sokungagungqi. Isibonisi se-hafnium-zirconium oxide ferroelectric tunneling interface sinokusebenza ngokuthoba amaxesha asezantsi kakhulu kunamaqondo akhoyo. Ngokufikelela okukhawulezileyo kokusebenza kwee-nanoseconds ezingama-50 kunye nokuqina kokusebenza okungaphezulu kwezigidi ezili-10, eli candelo lingasetyenziselwa ukwenza amanethiwekhi antsokothileyo engqondo kubuchopho boluntu ukuze imisebenzi echanekileyo nefanelekileyo ye-AI kwixesha elizayo.
I-IEDM yinkomfa yonyaka ye-semi-conductor semiconductor technology technology. I-semiconductor ephezulu kunye neengcali ze-nanotechnology zehlabathi zixoxa ngemeko yophuhliso lwezinto ezintsha ze-elektroniki minyaka le. I-ITRI ipapashe inani lamaphepha abalulekileyo kwaye iye yapapashwa kakhulu kwicandelo lokukhumbula elivelayo. Amaziko aliqela athe apapasha amaphepha abandakanya iinkampani eziphambili ze-semiconductor ezifana ne-TSMC, Intel, kunye ne-Samsung.