I-TP65H050WS / TP65H035WS isiThathu soLwazelelo (Gen III) Gallium Nitride (GaN) I-Trans-Transistors yeNqanaba leSigaba se-Glium Nitride (GaN)

IiFET ze-GaN ze-Transphorm zibonisa ukutshintshwa okucothayo ngokunciphisa ukuphazamiseka kwe-electromagnetic (EMI) kunye nokwanda kokungafikeleki kwengxolo

I-TP65H050WS yeTransphorm kunye ne-TP65H035WS zii-Gen III 650 V GaN FETs. Bavelisa i-EMI ephantsi, ukungakhuseleki kwengxolo yesango, kunye nentloko enkulu kwizicelo zesekethe. I-50 mΩ TP65H050WS kunye ne-35 mΩ TP65H035WS ifumaneka kwiiphakheji eziqhelekileyo TO-247.

I-MOSFET kunye nohlengahlengiso zoyilo zenza ukuba izixhobo zeGen III zikhuphe umbhobho okonyukayo (ukungavakali kwengxolo) ukuya kwi-4 V ukusuka kwi-2.1 V (Gen II) ephelisa imfuneko yokuqhutywa kwesango. Ukunyaniseka kwesango kunyuke ukusuka kwi-G II nge-11% ukuya kwi-20 V ubuninzi. Oku kukhokelela ekutshintsheni okuthe cwaka kunye neqonga elibonakalisa ukuphuculwa kokusebenza kumanqanaba aphezulu okwangoku ngokujikeleza okulula kwangaphandle.

I-1600 yeTekhnoloji ye-Se Nokia Electronics yindawo ye-1600 W, eqonga engabinayo i-volem-pole esebenzisa i-voltage eziphezulu ze-GaN FET ukuzisa i-99% yamandla okulungisa (i-PFC) ukusebenza ngokufanelekileyo kwiibhetri (ii-scooters, imizi-mveliso, nokunye), amandla e-PC, iiseva , kunye neemarike zemidlalo. Izibonelelo zokusebenzisa ezi-FETs ngeplani esekwe nge-1600T ibandakanya ukwanda kokusebenza nge-2% kunye nokunyuka kwengxinano yamandla ngama-20%.

Iqonga le-1600T lisebenzisa i-TP65H035WS yeTransphorm ukufezekisa ukusebenza kakuhle kwimijikelezo enobunzima kunye nezitshintshiweyo kwaye inike abasebenzisi ukhetho xa beyila izixhobo zenkqubo yamandla. I-TP65H035WS izibini ezinamavili asetyenziswa rhoqo ukuze kube lula ukuyila.